advanced power n-channel enhancement mode electronics corp. power mosfet simple drive requirement bv dss 100v lower on-resistance r ds(on) 18m fast switching characteristic i d 67a rohs compliant & halogen-free description absolute maximum ratings@t j =25 o c(unless otherwise specified) symbol units v ds v v gs v i d @t c =25 a i d @t c =100 a i dm a p d @t c =25 w e as single pulse avalanche energy 3 mj t stg t j symbol value units rthj-c maximum thermal resistance, junction-case 0.75 /w rthj-a 40 /w rthj-a maixmum thermal resistance, junction-ambient 6 2 /w data and specifications subject to change without n otice total power dissipation 167 parameter storage temperature range operating junction temperature range -55 to 150 thermal data drain current, v gs @ 10v 42 pulsed drain current 1 250 gate-source voltage + 20 drain current, v gs @ 10v 67 parameter rating ap60t10gs/p-hf 201501155 1 halogen-free product -55 to 150 288 maximum thermal resistance, junction-ambient (pcb m ount) 4 drain-source voltage 100 g d s g d s to-220(p) g d s to-263(s) ap60t10 series are from advanced power innovated design and silicon process technology to achieve the lowest possible on-resis tance and fast switching performance. it provides the designer with a n extreme efficient device for use in a wide range of power a pplications. the to-263 package is widely preferred for all commercial-i ndustrial surface mount applications using infrared reflow techniqu e and suited for high current application due to the low connection resis tance. the through-hole version (ap60t10gp) are available for low-pr ofile applications.
electrical characteristics@t j =25 o c(unless otherwise specified) symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =250ua 100 - - v r ds(on) static drain-source on-resistance 2 v gs =10v, i d =28a - - 18 m v gs(th) gate threshold voltage v ds =v gs , i d =250ua 2 - 5 v g fs forward transconductance v ds =25v, i d =28a - 45 - s i dss drain-source leakage current v ds =80v, v gs =0v - - 25 ua i gss gate-source leakage v gs = + 20v, v ds =0v - - + 100 na q g total gate charge i d =28a - 55 90 nc q gs gate-source charge v ds =80v - 15 - nc q gd gate-drain ("miller") charge v gs =10v - 24 - nc t d(on) turn-on delay time v ds =50v - 16 - ns t r rise time i d =28a - 68 - ns t d(off) turn-off delay time r g =2.5 ,v gs =10v - 29 - ns t f fall time r d =1.8 - 42 - ns c iss input capacitance v gs =0v - 2800 4500 pf c oss output capacitance v ds =25v - 400 - pf c rss reverse transfer capacitance f=1.0mhz - 155 - pf source-drain diode symbol parameter test conditions min. typ. max. units v sd forward on voltage 2 i s =28a, v gs =0v - - 1.3 v t rr reverse recovery time i s =28a, v gs =0v - 80 - ns q rr reverse recovery charge di/dt=100a/s - 270 - nc notes: 1.pulse width limited by max. junction temperature. 2.pulse test 3.starting t j =25 o c , v dd =50v , l=1mh , r g =25 , i as =24a. this product is sensitive to electrostatic discharg e, please handle with caution. use of this product as a critical component in life support or other similar systems is not authorized . apec does not assume any liability arising out of t he application or use of any product or circuit des cribed herein; neither does it convey any license under it s patent rights, nor the rights of others. apec reserves the right to make changes without fur ther notice to any products herein to improve reliability, function or design. ap60t10gs/p-hf 2 4.surface mounted on 1 in 2 copper pad of fr4 board
fig 1. typical output characteristics fig 2. typical output characteristics fig 3. normalized bv dss v.s. junction fig 4. normalized on-r esistance temperature v.s. junction tempe rature fig 5. forward characteristic of fig 6. gate threshold voltage v.s. reverse diode junction temperature 3 ap60t10gs/p-hf 0 40 80 120 160 200 0 2 4 6 8 10 v ds , drain-to-source voltage (v) i d , drain current (a) t c = 25 o c 10 v 9.0v 8.0v 7.0v v g = 6 .0v 0 20 40 60 80 100 0 2 4 6 8 10 v ds , drain-to-source voltage (v) i d , drain current (a) t c = 150 o c 10v 9.0v 8.0v 7.0v v g = 6.0 v 0.4 0.8 1.2 1.6 2.0 2.4 -50 0 50 100 150 t j , junction temperature ( o c) normalized r ds(on) i d = 28a v g = 10v 0 10 20 30 0 0.2 0.4 0.6 0.8 1 1.2 1.4 v sd , source-to-drain voltage (v) i s (a) t j =25 o c t j =150 o c 0.0 0.4 0.8 1.2 1.6 -50 0 50 100 150 t j , junction temperature ( o c) normalized v gs(th) 0.8 0.9 1 1.1 1.2 -50 0 50 100 150 t j , junction temperature ( o c) normalized bv dss
ap60t10gs/p-hf fig 7. gate charge characteristics fig 8. typical capacitance characteristi cs fig 9. maximum safe operating area fig 10. effective transient thermal impedance fig 11. switching time waveform fig 12. gate charge waveform 4 0 2 4 6 8 10 12 0 20 40 60 80 q g , total gate charge (nc) v gs , gate to source voltage (v) v ds = 50 v v ds = 60 v v ds = 80 v i d = 28 a q v g 10v q gs q gd q g charge 0 1000 2000 3000 4000 1 5 9 13 17 21 25 29 v ds ,drain-to-source voltage (v) c (pf) f=1.0mhz c iss c oss c rss 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 t , pulse width (s) normalized thermal response (r thjc ) p dm duty factor = t/t peak t j = p dm x r thjc + t c t t 0.02 0.01 0.05 0.1 0.2 duty factor=0.5 single pulse 1 10 100 1000 0.1 1 10 100 1000 v ds , drain-to-source voltage (v) i d (a) t c =25 o c single pulse 100us 1ms 10ms 100ms dc t d(on) t r t d(off) t f v ds v gs 10% 90% operation in this area limited by r ds(on)
marking information to-263 to-220 5 ap60t10gs/p-hf part number package code meet rohs requirement for low voltage mosfet only date code (ywwsss) y last digit of the year ww week sss sequence 60t10gs ywwsss part number package code meet rohs requirement for low voltage mosfet only 60t10gp ywwsss date code (ywwsss) y last digit of the year ww week sss sequence
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